US Patent Issued to Taiwan Semiconductor Manufacturing on April 8 for "Magnetic tunnel junction device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,181, issued on April 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetic tunnel junction device and method" was invented by Tai-Yen Peng (Hsinchu, Taiwan), Yu-Feng Yin (Hsinchu, Taiwan), An-Shen Chang (Jubei, Taiwan), Han-Ting Tsai (Kaoshiung, Taiwan) and Qiang Fu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks ...