US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 8 for "Flash memory layout to eliminate floating gate bridge" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,054, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Flash memory layout to eliminate floating gate bridge" was invented by Shun-Neng Wang (New Taipei, Taiwan), Tung-Huang Chen (Taichung, Taiwan) and Ching-Hung Kao (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory includes a linear array of flash memory cells having a source region extending along a first direction. Each flash memory cell includes a floating gate disposed adjacent the source region. The linear array of flash memory cells further includes isolation strips disposed between the floating gates of the flas...