US Patent Issued to Taiwan Semiconductor Manufacturing on April 8 for "FinFET and gate-all-around FET with selective high-k oxide deposition" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,736, issued on April 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FinFET and gate-all-around FET with selective high-k oxide deposition" was invented by Tsung-Han Tsai (Kaohsiung, Taiwan), Jen-Hsiang Lu (Taipei, Taiwan) and Shih-Hsun Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes first and second gate spacers formed over a semiconductor substrate, longitudinally extending along a first direction, and separated from each other by a gate electrode layer. A first insulating layer longitudinally extends a...