US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 8 for "Asymmetric source/drain for backside source contact" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,729, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Asymmetric source/drain for backside source contact" was invented by Feng-Ching Chu (Pingtung County, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one example, a method includes performing a first etching process on a fin stack to form a first recess and a second recess at a first depth, the first recess and the second recess on opposite sides of a gate structure that is on the fin stack. The method further includes depositing inner spacers within th...