US Patent Issued to Taiwan Semiconductor Manufacturing on April 29 for "Transistor and manufacturing method of the same" (Belgian Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,804, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor and manufacturing method of the same" was invented by Marcus Johannes Henricus Van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a first conductive type channel layer, a second conductive type channel layer, a gate structure, first source/drain regions and second source/drain regions. The first conductive type channel layer includes a plurality of first nanosheets. The second conductive type channel layer includes a plurality of second nanosheets stacked over the first nanosheets. The gate str...