ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,820, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Transistor, integrated circuit, and manufacturing method of transistor" was invented by Hung-Chang Sun (Kaohsiung, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Yu-Wei Jiang (Hsinchu, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan), TsuChing Yang (Taipei, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the dra...