ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,735, issued on April 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).
"Through via structure" was invented by Min-Feng Ku (Hsinchu, Taiwan), Yao-Chun Chuang (Hsinchu, Taiwan), Cheng-Chien Li (Hsinchu County, Taiwan) and Ching-Pin Lin (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary semiconductor structure includes a device substrate having a first side and a second side. A dielectric layer is disposed over the first side of the device substrate. A through via extends along a first direction through the dielectric layer and through the device substrate from the first side to the s...