ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,891, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor dies including low and high workfunction semiconductor devices" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Xinfeng Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor die includes forming, over a substrate, a stack including insulating layers and sacrificial layers alternatively on top of each other; replacing a portion of first sacrificial layers located in a first portion of the stack to form first gate layers; forming first channel layers extending in a first di...