US Patent Issued to Taiwan Semiconductor Manufacturing on April 29 for "Semiconductor devices including FTJ structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,893, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices including FTJ structure" was invented by Chun-Chieh Lu (Taipei, Taiwan), Qing Shi (Hsinchu, Taiwan), Bo-Feng Young (Taipei, Taiwan), Yu-Chuan Shih (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Blanka Magyari-Kope (Hsinchu County, Taiwan), Ying-Chih Chen (Hsinchu County, Taiwan), Tzer-Min Shen (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first electrode layer, a ferroelectric layer, a first align...