US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 29 for "Semiconductor device with source/drain contact" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,822, issued on April 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with source/drain contact" was invented by Wen-Che Tsai (Hsinchu, Taiwan), Min-Yann Hsieh (Kaohsiung, Taiwan), Hua-Feng Chen (Hsinchu, Taiwan) and Kuo-Hua Pan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an epitaxial structure over the substrate, a conductive structure, and a dielectric liner. The conductive structure extends from within the epitaxial structure to above the epitaxial structure. The dielectric liner extends along a sidewall of the conductive struct...