US Patent Issued to Taiwan Semiconductor Manufacturing on April 29 for "Semiconductor device with doped structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,809, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with doped structure" was invented by Miao-Syuan Fan (Hsinchu, Taiwan), Pei-Wei Lee (Hsinchu, Taiwan), Ching-Hua Lee (Hsinchu, Taiwan) and Jung-Wei Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second ...