ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,814, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacture" was invented by Wan-Yi Kao (Baoshan Township, Taiwan), Hung Cheng Lin (Hsinchu, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Yung-Cheng Lu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in ...