US Patent Issued to Taiwan Semiconductor Manufacturing on April 29 for "Semiconductor device and method" (Taiwanese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,791, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Yu-Rung Hsu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes etching a substrate to form a semiconductor fin, forming a gate stack on a top surface and sidewalls of the semiconductor fin, and forming a first recess in the semiconductor fin on a side of the gate stack, wherein forming the first recess comprises, performing a first etching process to form a first portion of the first recess, depositing a first dielectric layer on sidewalls of the gate stack and the firs...