ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,723, issued on April 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by Chi-Wei Wu (Hsinchu, Taiwan), Hsin-Che Chiang (Taipei, Taiwan) and Chun-Sheng Liang (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first and second gate stacks extending across a semiconductor fin on a substrate; forming source/drain regions in the semiconductor fin, wherein one of the source/drain region is between the first and second gate stacks; forming a dielectric layer laterally surrounding the first and second gate ...