ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,758, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Polyimide profile control" was invented by Chen-Chi Huang (Hsinchu, Taiwan), Chang-Yao Huang (New Taipei, Taiwan) and Po-Cheng Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a controlled polyimide profile. A method for forming such a structure includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a...