ALEXANDRIA, Va., June 9 -- United States Patent no. 12,287,575, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).
"Photoresist and method of formation and use" was invented by Keng-Chu Lin (Ping-Tung, Taiwan), Joung-Wei Liou (Zhudong, Taiwan), Cheng-Han Wu (Taichung, Taiwan) and Ya Hui Chang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto ...