ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,695, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method of forming a transistor device having dipole-containing gate dielectric layer and fluorine-containing gate dielectric layer" was invented by Chung-Wei Hsu (Baoshan Township, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Mao-Lin Huang (Hsinchu, Taiwan), Lung-Kun Chu (New Taipei, Taiwan), Jia-Ni Yu (New Taipei, Taiwan), Chun-Fu Lu (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a first dielectric layer over a first channel re...