US Patent Issued to Taiwan Semiconductor Manufacturing on April 29 for "Method of fabricating transistor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,890, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of fabricating transistor structure" was invented by Song-Fu Liao (Taipei, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a transistor structure is provided. The method comprises forming a gate electrode in a dielectric layer of an interconnect structure; forming a monolayer on a portion of the dielectric layer laterally spaced from the gate electrode; sequentially forming a ferroelectric layer, a barrier la...