US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 29 for "Metal gate for gate-all-around devices and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,811, issued on April 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal gate for gate-all-around devices and methods for forming the same" was invented by Shih-Hang Chiu (Taichung, Taiwan), Kuan-Ting Liu (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan), Chia-Wei Chen (Hsinchu, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan) and Cheng-Lung Hung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming an n-type work function layer in a gate trench in a gate structure, wherein the n-type work function ...