US Patent Issued to Taiwan Semiconductor Manufacturing on April 29 for "Fin bending reduction through structure design" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,721, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin bending reduction through structure design" was invented by De-Wei Yu (Ping-Tung, Taiwan), Ming-Feng Hsieh (New Taipei, Taiwan), Hsueh-Chang Sung (Zhubei, Taiwan), Pei-Ren Jeng (Chu-Bei, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan) and Chien-Chia Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes etching a semiconductor substrate to form a trench between a first semiconductor strip and a second semiconductor strip. The first semiconductor strip has a first width at about 5 nm below a top of the first semiconduct...