US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 22 for "Transistor device having ultraviolet attenuating capability" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,635, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Transistor device having ultraviolet attenuating capability" was invented by Katherine H. Chiang (Hsinchu, Taiwan), Neil Quinn Murray (Hsinchu, Taiwan), Ming-Yen Chuang (Hsinchu, Taiwan) and Chung-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by ...