US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Structure and formation method of semiconductor device with epitaxial structures" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,610, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure and formation method of semiconductor device with epitaxial structures" was invented by Chien-Tai Chan (Hsinchu, Taiwan), Yu-Ching Huang (Taipei, Taiwan), Chien-Chih Lin (Taichung, Taiwan) and Hsueh-Jen Yang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a formation method are provided. The method includes forming a protruding structure over a substrate. The protruding structure has multiple sacrificial layers and multiple semiconductor layers, and the sacrificial layers and the semico...