US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Stacked device structures and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,594, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stacked device structures and methods for forming the same" was invented by Chung-Liang Cheng (Hsinchu, Taiwan) and Ying-Hsun Chen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A complementary metal oxide semiconductor (CMOS) device includes a transistor of a first type formed over a first substrate, and a transistor of a second type formed over a second substrate. The CMOS device is formed when the transistor of the first type formed on the first substrate is bonded to the transistor of the second type formed over the second sub...