US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 22 for "Semiconductor structure and method for manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,623, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinch, Taiwan).

"Semiconductor structure and method for manufacturing thereof" was invented by Chih-Hsuan Lin (Hsinchu, Taiwan), Hsi Chung Chen (Tainan, Taiwan) and Chih-Teng Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a conductive region, a first insulation layer, a second insulation layer, a gate structure, a low-k spacer, a gate contact, and a conductive region contact. The low-k spacer is formed between a sidewall of the gate structure and the first insulation layer. The gate contact is la...