ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,806, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinch, Taiwan).
"Semiconductor device and method of manufacturing the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chih-Ren Hsieh (Changhua, Taiwan) and Ching-Wen Chan (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation ins...