ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,626, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Aryan Afzalian (Chastre, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes the following steps. A substrate is etched, forming a core structure protruding out of a plane of the substrate. Shallow trench isolation (STI) features are formed on opposite sides of the core structure. The substrate and a lower portion of the core structure are doped to form a first source/drain region with a first doping concentration. A barrier layer is grown on an upper portion of the core structure. A first...