US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 22 for "Methods of forming semiconductor device structures" (Taiwanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,527, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods of forming semiconductor device structures" was invented by Yu-Lien Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming fins from a substrate, forming a gate stack over portions of the fins, forming an epitaxial source/drain region adjacent the gate stack, depositing a dielectric layer over the epitaxial source/drain region, forming an opening in the dielectric layer, and forming a gapfill in the opening...