US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor wafer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,515, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor wafer" was invented by Sih-Jie Liu (Hsinchu County, Taiwan), Che-Fu Chiu (New Taipei, Taiwan), Bau-Ming Wang (Kaohsiung, Taiwan), Chun-Feng Nieh (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of transferring semiconductor wafers and a semiconductor wafer support device including lift pins having a first end configured to contact a backside surface of the semiconductor...