US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Memory sense amplifier with precharge" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,317, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory sense amplifier with precharge" was invented by Zheng-Jun Lin (Taichung, Taiwan), Chung-Cheng Chou (Hsinchu, Taiwan) and Pei-Ling Tseng (Mlaoli Counti, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell and a sense amplifier. The sense amplifier has a reference circuit configured to output a reference voltage and a sensing circuit connected to the memory cell. A comparator includes a first input and a second input, with the first input connected to the reference circuit to receive the reference volt...