US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 22 for "Memory device and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,311, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method for forming the same" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a memory device includes forming a first pull-up transistor, a first pull-down transistor, a first pass-gate transistor, a second pull-up transistor, a second pull-down transistor, a second pass-gate transistor over a substrate; forming a first bit line and a second bit line electrically connected to a source/drain epitaxy structure of the first pass-gate transistor and a sourc...