US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 22 for "Memory device and manufacturing thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,797, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and manufacturing thereof" was invented by Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relates to an integrated circuit including an array of memory cells having the word lines and high-voltage power lines positioned on one side of the transistors and the bit lines and low voltage power lines positioned on the other side of the transistor. The memory cells according to the present disclosure also improve routing efficiency, thus, removing bottleneck of furthe...