US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Memory device and manufacturing method thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,810, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and manufacturing method thereof" was invented by Meng-Han Lin (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan), Bo-Feng Young (Taipei, Taiwan), Nuo Xu (San Jose, Calif.), Sai-Hooi Yeong (Hsinchu County, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a word line, a source line, a bit line, a memory layer, a channel material layer is described. The word line extends in a first direction, and liner layers disposed on a sidewal...