US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Integration of multiple transistors having fin and mesa structures" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,595, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integration of multiple transistors having fin and mesa structures" was invented by Sung-Hsin Yang (Tainan, Taiwan), Ru-Shang Hsiao (Jhubei, Taiwan), Ching-Hwanq Su (Tainan, Taiwan), Chen-Bin Lin (Tainan, Taiwan) and Wen-Hsin Chan (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a bulk semiconductor substrate, a first plurality of dielectric isolation regions over the bulk semiconductor substrate, a plurality of semiconductor fins protruding higher than the first plurality of dielectric isolation regions, a first...