US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Gate structures in transistors and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,613, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structures in transistors and method of forming same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first wor...