US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Gate structure of transistor including a plurality of work function layers and oxygen device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,609, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structure of transistor including a plurality of work function layers and oxygen device and method" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Ji-Cheng Chen (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type w...