US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 22 for "Epitaxial source/drain structures for multigate devices and methods of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,630, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial source/drain structures for multigate devices and methods of fabricating thereof" was invented by Chen-Ming Lee (Yangmei, Taiwan), I-Wen Wu (Hsinchu, Taiwan), Po-Yu Huang (Hsinchu, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are discl...