US Patent Issued to Taiwan Semiconductor Manufacturing on April 22 for "Cut metal gate refill with void" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,485, issued on April 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Cut metal gate refill with void" was invented by Ting-Gang Chen (Taipei, Taiwan), Wan-Hsien Lin (Hsinchu, Taiwan), Chieh-Ping Wang (Taichung, Taiwan), Tai-Chun Huang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric r...