US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "SRAM-based cell for in-memory computing and hybrid computations/storage memory architecture" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,319, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd (Hsinchu, Taiwan).

"SRAM-based cell for in-memory computing and hybrid computations/storage memory architecture" was invented by Yu-Der Chih (Hsinchu, Taiwan), Chia-Fu Lee (Hsinchu, Taiwan) and Jonathan Tsung-Yung Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An in-memory computing device includes in some examples a two-dimensional array of memory cells arranged in rows and columns, each memory cell made of a nine-transistor current-based SRAM. Each memory cell includes a six-transistor SRAM cell and a current source coupled by a switching tran...