US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "Source leakage current suppression by source surrounding gate structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,272, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source leakage current suppression by source surrounding gate structure" was invented by Aurelien Gauthier Brun (Hsinchu County, Taiwan), Chun Lin Tsai (Hsin-Chu, Taiwan), Jiun-Lei Jerry Yu (Zhudong Township, Taiwan), Po-Chih Chen (Hsinchu, Taiwan) and Yun-Hsiang Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a method of forming a transistor device. The method includes forming a source contact over a substrate, forming a drain contact over the substrate, and forming a ga...