ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,147, issued on April 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Tun-Jen Chang (Hsinchu, Taiwan), Tung-Heng Hsieh (Zhudong Town, Taiwan) and Bao-Ru Young (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin structure over a substrate, forming a first source/drain feature and a second source/drain feature over the fin structure, forming a dielectric material over the first source/drain feature and the second source/drain feature, patterning the dielectric layer into insulating features, and form...