US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "Semiconductor die including through substrate via barrier structure and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,167, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor die including through substrate via barrier structure and methods for forming the same" was invented by Jen-Yuan Chang (Hsinchu, Taiwan), Chia-Ping Lai (Hsinchu, Taiwan), Shih-Chang Chen (Hsinchu, Taiwan), Tzu-Chung Tsai (Hsinchu, Taiwan) and Chien-Chang Lee (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A die includes: a semiconductor substrate having a front side and an opposing back side; a dielectric structure including a substrate oxide layer disposed on the front side of the semiconductor substrate and in...