US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "Semiconductor devices having funnel-shaped gate structures" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,267, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices having funnel-shaped gate structures" was invented by Shu-Han Chen (Hsinchu, Taiwan), Tsung-Ju Chen (Hsinchu, Taiwan), Chun-Heng Chen (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a structure includes: a nano-structure; an epitaxial source/drain region adjacent the nano-structure; a gate dielectric wrapped around the nano-structure; a gate electrode over the gate dielectric, the gate electrode having an upper portion and a lower portion, a first width of th...