ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,451, issued on April 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device including source/drain feature with multiple epitaxial layers" was invented by Feng-Ching Chu (Hsinchu, Taiwan), Chung-Chi Wen (Hsinchu, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according one embodiment of the present disclosure include a plurality of channel members disposed over a substrate, a plurality of inner spacer features interleaving the plurality of cha...