US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 15 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,233, issued on April 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Che-Cheng Chang (New Taipei, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes at least one semiconductor fin, a gate electrode, at least one gate spacer, and a gate dielectric. The semiconductor fin includes at least one recessed portion and at least one channel portion. The gate electrode is present on at least the channel portion of the semiconductor fin. The gate spacer is present on at least one si...