US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "Selective internal gate structure for ferroelectric semiconductor devices" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,287, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Selective internal gate structure for ferroelectric semiconductor devices" was invented by Cheng-Ming Lin (Kaohsiung, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Ziwei Fang (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device including a substrate and first and second spacers on the substrate. The semiconductor device also includes a gate stack between the first and second spacers. The gate stack includes a gate die...