US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "ONON sidewall structure for memory device and method for making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,977, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"ONON sidewall structure for memory device and method for making the same" was invented by Chen-Ming Huang (Tainan, Taiwan), Wen-Tuo Huang (Tainan, Taiwan), Yu-Hsiang Yang (Tainan, Taiwan), Yu-Ling Hsu (Tainan, Taiwan), Wei-Lin Chang (Changhua, Taiwan), Chia-Sheng Lin (Tainan, Taiwan), ShihKuang Yang (Tainan, Taiwan), Yu-Chun Chang (Tainan, Taiwan), Hung-Ling Shih (Tainan, Taiwan), Po-Wei Liu (Tainan, Taiwan) and Shih-Hsien Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and method of making the same are disclose...