ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,276, issued on April 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-channel devices and method with anti-punch through process" was invented by Ko-Cheng Liu (Hsinchu, Taiwan), Chang-Miao Liu (Hsinchu, Taiwan) and Ming-Lung Cheng (Kaohsiung County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a diffusion blocking layer on a semiconductor substrate; forming channel material layers over the diffusion blocking layer; patterning the semiconductor substrate, the channel material layers, and t...