US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "MRAM memory cell layout for minimizing bitcell area" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,437, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"MRAM memory cell layout for minimizing bitcell area" was invented by Harry-Hak-Lay Chuang (Hsinchu, Taiwan), Wen-Chun You (Hsinchu, Taiwan), Hung Cho Wang (Hsinchu, Taiwan) and Yen-Yu Shih (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MRAM memory cell includes a substrate and a transistor. The transistor includes: first and second source regions; a drain region between the first and second source regions; a first channel region between the drain region and the first source region; a second channel region between the drain regi...