ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,230, issued on April 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method of manufacturing conductors for semiconductor device" was invented by Kam-Tou Sio (Hsinchu, Taiwan), Chih-Liang Chen (Hsinchu, Taiwan), Hui-Ting Yang (Hsinchu, Taiwan), Shun Li Chen (Hsinchu, Taiwan), Ko-Bin Kao (Hsinchu, Taiwan), Chih-Ming Lai (Hsinchu, Taiwan), Ru-Gun Liu (Hsinchu, Taiwan) and Charles Chew-Yuen Young (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method (of manufacturing conductors for a semiconductor device) includes: forming active regions (ARs) in a first layer, the ARs extending in a first direc...