US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "Memory device with reset voltage control" (Canadian Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,991, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device with reset voltage control" was invented by Ali Taghvaei (Kanata, Canada) and Atul Katoch (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are related to a memory device. In one aspect, the memory device includes a memory cell, a precharge circuit, a reset voltage control circuit, and a logic control circuit. In one aspect, the precharge circuit is configured to set a voltage of the bit line to a first voltage level. In one aspect, the reset voltage control circuit includes a transistor coupled to the b...